| PART |
Description |
Maker |
| PYX28HC64-12L32MB PYX28HC64-70CWMB PYX28HC64-70L32 |
Access Times of 70, 90, and 120ns Software Data Protection
|
Pyramid Semiconductor C...
|
| CY14B104K-ZS45XI CY14B104K-ZS25XI CY14B104K-ZS25XI |
4-Mbit (512 K x 8/256 K x 16) nvSRAM with Real Time Clock 25 ns and 45 ns access times
|
Cypress Semiconductor
|
| IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
| UX-FOB |
High Voltage Power Diodes provide fast recovery times
|
getedz electronics
|
| MCM6729BWJ8R MCM6729B MCM6729BWJ10 MCM6729BWJ10R M |
256K x 4 Bit Fast Static Random Access Memory
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| 1205-30-9 |
FOR USE WITH TIMES M-5886 CABLE
|
Winchester Electronics ...
|
| VJDR1104P-4C81C-TR |
Five times brighter than current VFHR1104P
|
STANLEY ELECTRIC CO.,LT...
|
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| 1203-16-9 |
FOR USE TIMES M-2831 & FEP 226 CABLE
|
Winchester Electronics Corp...
|
| MCM6946YJ10 MCM6946YJ10R MCM6946TS1 MCM6946TS8 MCM |
512K x 9 Bit Fast Static Random Access Memory 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 9 Bit Fast Static Random Access Memory 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
